An 8.4 GHz SiGe/Si HBT-Based MMIC Power Amplifier
نویسندگان
چکیده
A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an fmax of 67 GHz and a BVCBO of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. The power amplifier demonstrated a linear gain of 8.6 dB, output power at peak efficiency of 22.9 dBm and a saturated output power of 24.8 dBm.
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